CSD18536KTTT N-Channel MOSFET, 349 A, 60 V NexFET, 3-Pin D2PAK Texas Instruments [CSD18536KTTT]; 133-0153
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Mã kho: 1330153
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 349 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.4V |
Maximum Power Dissipation | 375 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 11.33mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 230 nC |
Forward Diode Voltage | 1V |
Length | 10.67mm |
Maximum Operating Temperature | +175 °C |
Series | NexFET |
Height | 4.83mm |