STD10NM60ND N-Channel MOSFET, 8 A, 600 V FDmesh, 3-Pin DPAK STMicroelectronics [STD10NM60ND]; 168-7462
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 70 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Height | 2.4mm |
| Series | FDmesh |
| Minimum Operating Temperature | -55 °C |
| Width | 6.2mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 6.6mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |