RD3S100CNTL1 N-Channel MOSFET, 10 A, 190 V RD3S100CN, 3-Pin DPAK ROHM [RD3S100CNTL1]; 177-6712
by ROHM
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Mã kho: 1776712
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.416666666666667 |
Maximum Drain Source Voltage | 190 V |
Package Type | TO-252 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 182 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 0.5V |
Maximum Power Dissipation | 85 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Width | 6.4mm |
Minimum Operating Temperature | -55 °C |
Length | 6.8mm |
Forward Diode Voltage | 1.5V |
Typical Gate Charge @ Vgs | 52 nC @ 10 V |
Height | 2.4mm |
Series | RD3S100CN |
Maximum Operating Temperature | +150 °C |