RFD3055LESM9A N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK ON Semiconductor [RFD3055LESM9A]; 166-3195
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Mã kho: 1663195
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 107 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 38 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Typical Gate Charge @ Vgs | 9.4 nC @ 10 V |
| Height | 2.39mm |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |