NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor [NVMFD5C650NLT1G]; 172-3297
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Mã kho: 1723297
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 111 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 125 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Height | 1.05mm |
| Series | NVMFD5C650NL |
| Width | 5.1mm |
| Length | 6.1mm |
| Minimum Operating Temperature | -55 °C |