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FQD12N20TM N-Channel MOSFET, 9 A, 200 V QFET, 3-Pin DPAK ON Semiconductor [FQD12N20TM]; 166-3700
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Mã kho: 1663700
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.375 |
Maximum Drain Source Voltage | 200 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 280 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 55 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 6.73mm |
Transistor Material | Si |
Series | QFET |
Minimum Operating Temperature | -55 °C |
Width | 6.22mm |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Height | 2.39mm |