FDB28N30TM N-Channel MOSFET, 28 A, 300 V UniFET, 3-Pin D2PAK ON Semiconductor [FDB28N30TM]; 759-8970
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Mã kho: 7598970
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 28 A |
Maximum Drain Source Voltage | 300 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 129 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 11.33mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 39 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 4.83mm |
Series | UniFET |
Maximum Operating Temperature | +150 °C |
Length | 10.67mm |