FDB12N50TM N-Channel MOSFET, 11.5 A, 500 V UniFET, 3-Pin D2PAK ON Semiconductor [FDB12N50TM]; 166-2303
0₫
Mã kho: 1662303
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 11.5 A |
Maximum Drain Source Voltage | 500 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 650 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 165 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 9.65mm |
Minimum Operating Temperature | -55 °C |
Length | 10.67mm |
Transistor Material | Si |
Height | 4.83mm |
Series | UniFET |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 22 nC @ 10 V |