FCD360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor [FCD360N65S3R0]; 178-4645
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Mã kho: 1784645
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 0.416666666666667 |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-252 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 360 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 83 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Width | 6.22mm |
Height | 2.39mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +150 °C |
Length | 6.73mm |