PHKD6N02LT,518 Dual N-Channel MOSFET, 10.9 A, 20 V, 8-Pin SOIC Nexperia [PHKD6N02LT,518]; 166-1584
by Nexperia
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Mã kho: 1661584
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10.9 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 4.17 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.45mm |
| Width | 4mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 15.3 nC @ 5 V |