IXFN80N50Q3 N-Channel MOSFET, 63 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS [IXFN80N50Q3]; 146-1760
by IXYS
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Mã kho: 1461760
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 63 A |
Maximum Drain Source Voltage | 500 V |
Package Type | SOT-227B |
Mounting Type | Panel Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 65 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 6.5V |
Maximum Power Dissipation | 780 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 25.07mm |
Typical Gate Charge @ Vgs | 200 nC @ 10 V |
Height | 9.6mm |
Series | HiperFET, Q3-Class |
Maximum Operating Temperature | +150 °C |
Length | 38.23mm |
Transistor Material | Si |