IXFN110N85X N-Channel MOSFET, 110 A, 850 V HiperFET, 4-Pin SOT227 IXYS [IXFN110N85X]; 146-4396
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Mã kho: 1464396
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 850 V |
Package Type | SOT227 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 33 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 1.17 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.4V |
Minimum Operating Temperature | -55 °C |
Width | 25.07mm |
Length | 38.23mm |
Maximum Operating Temperature | +150 °C |
Series | HiperFET |
Height | 9.6mm |
Typical Gate Charge @ Vgs | 425 @ 10 V nC |