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IXFN110N60P3 N-Channel MOSFET, 90 A, 600 V HiperFET, Polar3, 4-Pin SOT-227B IXYS [IXFN110N60P3]; 168-4756
by IXYS
0₫
Mã kho: 1684756
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 600 V |
Package Type | SOT-227B |
Mounting Type | Panel Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 56 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.5 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 245 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 9.6mm |
Width | 25.07mm |
Series | HiperFET, Polar3 |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 38.23mm |