IXFH120N20P N-Channel MOSFET, 120 A, 200 V HiperFET, Polar, 3-Pin TO-247 IXYS [IXFH120N20P]; 193-458
by IXYS
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Mã kho: 193458
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 22 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 714 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 5.3mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 152 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Length | 16.26mm |
Series | HiperFET, Polar |
Height | 21.46mm |