IXFB110N60P3 N-Channel MOSFET, 110 A, 600 V HiperFET, Polar3, 3-Pin PLUS264 IXYS [IXFB110N60P3]; 168-4726
by IXYS
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Mã kho: 1684726
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 600 V |
Package Type | PLUS264 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 56 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.89 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Length | 20.29mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 245 nC @ 10 V |
Series | HiperFET, Polar3 |
Width | 5.31mm |
Height | 26.59mm |
Minimum Operating Temperature | -55 °C |