SPD04P10PLGBTMA1 P-Channel MOSFET, 4.2 A, 100 V SIPMOS, 3-Pin DPAK Infineon [SPD04P10PLGBTMA1]; 165-5945
by Infineon
0₫
Mã kho: 1655945
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.2 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.05 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 38 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 6.22mm |
| Height | 2.41mm |
| Series | SIPMOS |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73mm |
| Transistor Material | Si |