IRF8915TRPBF Dual N-Channel MOSFET, 8.9 A, 20 V HEXFET, 8-Pin SOIC Infineon [IRF8915TRPBF]; 165-8279
by Infineon
0₫
Mã kho: 1658279
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8.9 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 27 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.7V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
| Width | 4mm |
| Forward Diode Voltage | 1V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.9 nC @ 4.5 V |
| Length | 5mm |