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IRF8915TRPBF Dual N-Channel MOSFET, 8.9 A, 20 V HEXFET, 8-Pin SOIC Infineon [IRF8915TRPBF]; 165-8279
by Infineon
0₫
Mã kho: 1658279
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 8.9 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 27 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.7V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Maximum Operating Temperature | +150 °C |
Series | HEXFET |
Height | 1.5mm |
Minimum Operating Temperature | -55 °C |
Width | 4mm |
Forward Diode Voltage | 1V |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 4.9 nC @ 4.5 V |
Length | 5mm |