IRF1018ESTRLPBF N-Channel MOSFET, 79 A, 60 V HEXFET, 3-Pin D2PAK Infineon [IRF1018ESTRLPBF]; 165-8198
by Infineon
0₫
Mã kho: 1658198
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 79 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 110 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Height | 4.83mm |
Typical Gate Charge @ Vgs | 46 nC @ 10 V |
Width | 11.3mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Forward Diode Voltage | 1.3V |
Length | 10.67mm |
Minimum Operating Temperature | -55 °C |