IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon [IPI032N06N3GAKSA1]; 145-8703
by Infineon
0₫
Mã kho: 1458703
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 60 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 188 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 124 nC @ 10 V |
Length | 10.36mm |
Forward Diode Voltage | 1.2V |
Transistor Material | Si |
Width | 4.572mm |
Maximum Operating Temperature | +175 °C |
Series | OptiMOS 3 |
Height | 11.177mm |