IPD80R1K4P7ATMA1 N-Channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK Infineon [IPD80R1K4P7ATMA1]; 168-5917
by Infineon
0₫
Mã kho: 1685917
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 32 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | CoolMOS P7 |
| Minimum Operating Temperature | -55 °C |
| Width | 6.22mm |
| Height | 2.41mm |
| Forward Diode Voltage | 0.9V |
| Length | 6.73mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |