IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon [IPD50R399CPBTMA1]; 165-6885
by Infineon
0₫
Mã kho: 1656885
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.375 |
| Maximum Drain Source Voltage | 550 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 900 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 6.73mm |
| Series | CoolMOS CP |
| Height | 2.413mm |
| Width | 6.223mm |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |