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IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon [IPD50R399CPBTMA1]; 165-6885
by Infineon
0₫
Mã kho: 1656885
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.375 |
Maximum Drain Source Voltage | 550 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 900 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 83 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 6.73mm |
Series | CoolMOS CP |
Height | 2.413mm |
Width | 6.223mm |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |