IPD053N08N3GATMA1 N-Channel MOSFET, 90 A, 80 V IPD053N08N3 G, 3 + 2 Tab-Pin DPAK Infineon [IPD053N08N3GATMA1]; 170-2283
by Infineon
0₫
Mã kho: 1702283
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 80 V |
Package Type | TO-252 |
Mounting Type | Surface Mount |
Pin Count | 3 + 2 Tab |
Maximum Drain Source Resistance | 9.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 52 nC @ 10 V |
Length | 6.73mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Series | IPD053N08N3 G |
Height | 2.41mm |
Width | 7.36mm |