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IPB80N06S4L07ATMA2 N-Channel MOSFET, 80 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB80N06S4L07ATMA2]; 826-9459
by Infineon
0₫
Mã kho: 8269459
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 11.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 79 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS T2 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 58 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Height | 4.4mm |
Length | 10mm |
Width | 9.25mm |