![Infineon IPB80N06S209ATMA1 8269011](http://nguyenxuong.com/cdn/shop/products/R8269011-01_213182b2-c970-46a9-9826-e1962178f970_444x330.jpg?v=1594431458)
IPB80N06S209ATMA1 N-Channel MOSFET, 80 A, 55 V OptiMOS, 3-Pin D2PAK Infineon [IPB80N06S209ATMA1]; 826-9011
by Infineon
0₫
Mã kho: 8269011
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 55 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 9.1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 190 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 60 nC @ 10 V |
Series | OptiMOS |
Height | 4.4mm |
Width | 9.25mm |
Length | 10mm |