IPB60R160P6ATMA1 N-Channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK Infineon [IPB60R160P6ATMA1]; 130-0894
by Infineon
0₫
Mã kho: 1300894
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 23.8 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 160 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 176 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Series | CoolMOS P6 |
| Height | 9.45mm |
| Length | 10.31mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 0.9V |
| Width | 4.57mm |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |