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IPB60R160P6ATMA1 N-Channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK Infineon [IPB60R160P6ATMA1]; 130-0894
by Infineon
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Mã kho: 1300894
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 23.8 A |
Maximum Drain Source Voltage | 650 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 160 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 176 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Series | CoolMOS P6 |
Height | 9.45mm |
Length | 10.31mm |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 0.9V |
Width | 4.57mm |
Typical Gate Charge @ Vgs | 44 nC @ 10 V |