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IPB120N06S402ATMA2 N-Channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB120N06S402ATMA2]; 165-5662
by Infineon
0₫
Mã kho: 1655662
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 188 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Height | 4.4mm |
Typical Gate Charge @ Vgs | 150 nC @ 10 V |
Series | OptiMOS T2 |
Length | 10mm |
Minimum Operating Temperature | -55 °C |
Width | 9.25mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |