IPA65R650CEXKSA1 N-Channel MOSFET, 10.1 A, 650 V CoolMOS, 3+Tab-Pin TO-220FP Infineon [IPA65R650CEXKSA1]; 133-9810
by Infineon
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Mã kho: 1339810
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 10.1 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Pin Count | 3 + Tab |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 86 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 23 nC @ 10 V |
Length | 10.65mm |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 0.9V |
Minimum Operating Temperature | -40 °C |
Series | CoolMOS |
Width | 4.9mm |
Height | 16.15mm |