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BSZ12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V OptiMOS 3, 8-Pin TSDSON Infineon [BSZ12DN20NS3GATMA1]; 165-6894
by Infineon
0₫
Mã kho: 1656894
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 11.3 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TSDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 125 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 50 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Series | OptiMOS 3 |
Width | 3.4mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Height | 1.1mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 6.5 nC @ 10 V |
Length | 3.4mm |