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BSS806NEH6327XTSA1 N-Channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23 Infineon [BSS806NEH6327XTSA1]; 165-5871
by Infineon
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Mã kho: 1655871
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.3 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 82 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.75V |
Minimum Gate Threshold Voltage | 0.3V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 1 |
Width | 1.3mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 2 |
Maximum Operating Temperature | +150 °C |
Length | 2.9mm |
Typical Gate Charge @ Vgs | 1.7 nC @ 2.5 V |
Height | 1mm |