BSD235NH6327XTSA1 Dual N-Channel MOSFET, 950 mA, 20 V OptiMOS 2, 6-Pin SOT-363 Infineon [BSD235NH6327XTSA1]; 165-5872
by Infineon
0₫
Mã kho: 1655872
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 950 mA |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-363 (SC-88) |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 600 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.2V |
Minimum Gate Threshold Voltage | 0.7V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Length | 2mm |
Width | 1.25mm |
Typical Gate Charge @ Vgs | 0.32 nC @ 4.5 V |
Height | 0.8mm |
Series | OptiMOS 2 |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |