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BSC050NE2LSATMA1 N-Channel MOSFET, 58 A, 25 V OptiMOS, 8-Pin TDSON Infineon [BSC050NE2LSATMA1]; 165-5985
by Infineon
0₫
Mã kho: 1655985
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 58 A |
Maximum Drain Source Voltage | 25 V |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 7.1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 28 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Length | 6.1mm |
Minimum Operating Temperature | -55 °C |
Width | 5.35mm |
Series | OptiMOS |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 5 nC @ 4.5 V |
Height | 1.1mm |