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Discrete Semiconductors
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Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 168-7768
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
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Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P [GT40WR21,Q(O]; 891-2746
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1800 V Maximum Gate Emitter Voltag...
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STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247 [STGW30NC120HD]; 795-9136
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltage ±25V ...
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STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247 [STGW30NC120HD]; 168-7744
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 796-5061
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 796-5064
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN [GT60PR21,STA1F(S]; 799-4889
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1100 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 168-7767
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
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Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN [GT40WR21,Q(O]; 799-4864
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1800 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3P [GT60PR21,STA1F(S]; 891-2756
Toshiba.THÔNG SỐ KỸ THUẬT:
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ON Semiconductor FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264 [FGL40N120ANDTU]; 671-5408
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 64 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Toshiba GT40T321,Q(O IGBT, 40 A 1500 V, 3-Pin TO-3PN [GT40T321,Q(O]; 756-0559
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1500 V Maximum Gate Emitter Voltage ±25V ...
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ON Semiconductor FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247 [FGH30S130P]; 864-8849
ON SemiconductorTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1300 V Maximum Gate Emitter Voltage ±25V ...
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ON Semiconductor FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247 [FGH30S130P]; 166-3300
ON SemiconductorTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1300 V Maximum Gate Emitter Voltage ±25V ...
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ON Semiconductor FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264 [FGL40N120ANDTU]; 124-1767
ON SemiconductorTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 64 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltage ±25V ...
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