SI5517DU-T1-GE3 Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay [SI5517DU-T1-GE3]; 919-4321
by Vishay
0₫
Mã kho: 9194321
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N, P |
Maximum Continuous Drain Current | 3.7 A, 7.2 A |
Maximum Drain Source Voltage | 20 V |
Package Type | PowerPAK ChipFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 55 mΩ, 131 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Power Dissipation | 8.3 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 9.1 nC @ 8 V, 10.5 nC @ 8 V |
Height | 0.85mm |
Width | 1.98mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Length | 3.08mm |