NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor [NVMFD5C650NLT1G]; 172-3361
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Mã kho: 1723361
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 111 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DFN |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 5.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 125 W |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Width | 5.1mm |
Typical Gate Charge @ Vgs | 37 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Series | NVMFD5C650NL |
Height | 1.05mm |
Automotive Standard | AEC-Q101 |
Forward Diode Voltage | 1.2V |
Length | 6.1mm |